Wavelength dependence of TO in InGaAsP semiconductor laser diodes
نویسندگان
چکیده
The temperature sensitivity of laser threshold current in single mode, wavelength tunable, InGaAsP bulk active region semiconductor lasers diodes is measured in the temperature range, 293 K 6 T 6 355 K and wavelength range 1.23 pm il < <, 1.35 pm. When proper account is taken of peak gain variation with temperature, the temperature dependence of laser threshold current (parameterized by T,) is insensitive to lasing wavelength over a wide tuning range.
منابع مشابه
Design of a new asymmetric waveguide in InP-Based multi-quantum well laser
Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...
متن کاملTemperature dependence of long wavelength semiconductor lasers
We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, /z = 1.3 ,um. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines lase...
متن کاملPulse Break - Up due to Cross - Gain Modulation in an InGaAsP Laser
We report on a cross-gain and cross-phase modulation experiment in an InGaAsP semiconductor optical ampliier. For 150 fs pulses we observe large pulse broadening and pulse break-up resulting in performance limitations for ultrafast switching devices. Introduction: Semiconductor optical ampliiers (SOA's) are key components in high-speed optical communication networks in functions as optical swit...
متن کاملReducing Temperature Dependence of Semiconductor Lasers Using Nonidentical Multiple Quantum \Vells
Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteiistics. With proper layout of the nonidentical MQWs, the characteristic temperature ofthe laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30°C to 4OUC...
متن کاملImproving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering
To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1999